21 results
Electron Field Emission from Aluminum Nitride
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
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- 10 February 2011, 437
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- 1997
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Surface damage effects on secondary electron emission From the negative electron affinity diamond surface
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- MRS Online Proceedings Library Archive / Volume 416 / 1995
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- 10 February 2011, 311
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- 1995
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Influence Of Surface Terminating Species On Electron Emission From Diamond Surfaces
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- MRS Online Proceedings Library Archive / Volume 416 / 1995
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- 10 February 2011, 263
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- 1995
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Electronic Structure of Polycrystalline PECVD Diamond Surfaces
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- MRS Online Proceedings Library Archive / Volume 416 / 1995
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- 10 February 2011, 133
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- 1995
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Development of Epitaxial, Tiling, and Cutting Processes for a Diamond Single Crystal Wafer Technology
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- MRS Online Proceedings Library Archive / Volume 416 / 1995
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- 10 February 2011, 45
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- 1995
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Surface Preparation of Single Crystal C(001) Substrates for Homoepitaxial Diamond Growth
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- MRS Online Proceedings Library Archive / Volume 339 / 1994
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- 21 February 2011, 51
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- 1994
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Exposure of Diamond to Atomic Hydrogen: Secondary Electron Emission and Conductivity Effects
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- MRS Online Proceedings Library Archive / Volume 339 / 1994
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- 21 February 2011, 39
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- 1994
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Chemical Vapor Deposition of Diamond Films Using Water:Alcohol:Organic-Acid Solutions
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- MRS Online Proceedings Library Archive / Volume 242 / 1992
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- 25 February 2011, 23
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- 1992
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MBE Growth and Characterization of SxGe1−x Multilayer Structures on Si (100) for Use as a Substrate for GaAs Heteroepitaxy
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- MRS Online Proceedings Library Archive / Volume 220 / 1991
- Published online by Cambridge University Press:
- 22 February 2011, 265
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- 1991
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Growth and Characterization of Heteroepitaxial Nickel Films on Diamond Substrates
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- MRS Online Proceedings Library Archive / Volume 202 / 1990
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- 25 February 2011, 463
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- 1990
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High-Resolution Transmission Electron Microscopy: An Essential Characterization Technique for Optimization of Semiconductor Epitaxy and Interfaces
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- MRS Online Proceedings Library Archive / Volume 139 / 1989
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- 21 February 2011, 345
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- 1989
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ZnGeP2: A Wide Bandgap Chalcopyrite Structure Semiconductor for Nonlinear Optical Applications
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- MRS Online Proceedings Library Archive / Volume 162 / 1989
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- 26 February 2011, 615
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- 1989
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Microstructural and Optical Characterization of GaN Films Grown by PECVD on (0001) Sapphire Substrates
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- MRS Online Proceedings Library Archive / Volume 162 / 1989
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- 26 February 2011, 531
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- 1989
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Low Temperature Cleaning of Ge and GaAs Surfaces Using Hydrogen Dissociated with a Remote Noble-Gas Discharge
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- MRS Online Proceedings Library Archive / Volume 165 / 1989
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- 21 February 2011, 221
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- 1989
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Development of Remote Plasma Enhanced Ohemical Vapor Deposition Processes Through the use of in Vacuo Electron Diffraction and Electron Spectroscopy
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- MRS Online Proceedings Library Archive / Volume 165 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 151
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- 1989
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Correlation of steady-state creep and changing microstructure in polycrystalline SiC sintered with powder derived via gaseous reactants in an are plasma
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- Journal of Materials Research / Volume 3 / Issue 5 / October 1988
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1021-1030
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- October 1988
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Organometallic Vapor Phase Epitaxial Growth of ZnGeAs2 and (ZnGeAs2)xGe1−x on GaAs
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- MRS Online Proceedings Library Archive / Volume 144 / 1988
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- 26 February 2011, 61
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- 1988
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Molecular Beam Epitaxial Growth and Characterization of GaAs on Sapphire and Silicon-on-Sapphire Substrates
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- MRS Online Proceedings Library Archive / Volume 144 / 1988
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- 26 February 2011, 195
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- 1988
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Hetroepitaxy of GaAs by MBE on High Temperature Hydrogen Annealed Nominally (100) Oriented Silicon
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- MRS Online Proceedings Library Archive / Volume 102 / 1987
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- 26 February 2011, 443
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- 1987
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Defect and Dopant Control During Silicon Epitaxy Using B and Ge
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- MRS Online Proceedings Library Archive / Volume 104 / 1987
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- 26 February 2011, 641
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- 1987
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